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- 2003
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Mark
Luminescence polarization of ordered GaInP/InP islands
- Contribution to journal › Article
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Mark
Sharp exciton emission from single InAs quantum dots in GaAs nanowires
- Contribution to journal › Article
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Mark
Composition-dependent crystallization of alternative gate dielectrics.
- Contribution to journal › Article
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Mark
Transport through an isolated artificial molecule formed from stacked self-assembled quantum dots
- Contribution to journal › Article
- 2002
-
Mark
Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes
- Contribution to journal › Article
-
Mark
Diode and transistor behaviors of three-terminal ballistic junctions
- Contribution to journal › Article
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Mark
Electronic structure of nanometer-scale GaAs whiskers
- Contribution to journal › Article
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Mark
Single-electron tunneling effects in a metallic double dot device
- Contribution to journal › Article
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Mark
Anti-domain-free GaP, grown in atomically flat (001) Si sub-mu m-sized openings
- Contribution to journal › Article
-
Mark
Electronic properties of vacancy-oxygen complex in Ge crystals
- Contribution to journal › Article
