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- 2002
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Mark
Fabrication of 10 nm enclosed nanofluidic channels
- Contribution to journal › Article
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Fabrication of 10nm enclosed nanofluidic structures
- Contribution to journal › Article
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Mark
Gradient Structures Interfacing Microfluidics and Nanofluidics
- Contribution to journal › Article
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Mark
Electronic structure of nanometer-scale GaAs whiskers
- Contribution to journal › Article
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Mark
Single-electron tunneling effects in a metallic double dot device
- Contribution to journal › Article
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Mark
Anti-domain-free GaP, grown in atomically flat (001) Si sub-mu m-sized openings
- Contribution to journal › Article
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Mark
Nanowire resonant tunneling diodes
- Contribution to journal › Article
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Mark
Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes
- Contribution to journal › Article
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Mark
Diode and transistor behaviors of three-terminal ballistic junctions
- Contribution to journal › Article
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Mark
One-dimensional heterostructures in semiconductor nanowhiskers
- Contribution to journal › Article
