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2008
Mark A novel SR latch device realized by integration of three-terminal ballistic junctions in InGaAs/InP
Sun, Jie ^LU ; Wallin, Daniel ^LU ; Maximov, Ivan ^LU and Xu, Hongqi ^LU (2008) In IEEE Electron Device Letters 29(6). p.540-542
- Contribution to journal › Article
Mark Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate
Thelander, Claes ^LU ; Fröberg, Linus ^LU ; Rehnstedt, Carl ^LU ; Samuelson, Lars ^LU and Wernersson, Lars-Erik ^LU (2008) In IEEE Electron Device Letters 29(3). p.206-208
- Contribution to journal › Article
Mark Heterostructure Barriers in Wrap Gated Nanowire FETs
Fröberg, Linus ^LU ; Rehnstedt, Carl ; Thelander, Claes ^LU ; Lind, Erik ^LU ; Wernersson, Lars-Erik ^LU and Samuelson, Lars ^LU (2008) In IEEE Electron Device Letters 29(9). p.981-983
- Contribution to journal › Article
2006
Mark Vertical high-mobility wrap-gated InAs nanowire transistor
Bryllert, Tomas ^LU ; Wernersson, Lars-Erik ^LU ; Fröberg, Linus ^LU and Samuelson, Lars ^LU (2006) In IEEE Electron Device Letters 27(5). p.323-325
- Contribution to journal › Article
2004
Mark Novel nanoelectronic triodes and logic devices with TBJs
Xu, Hongqi ^LU ; Shorubalko, Ivan ^LU ; Wallin, Daniel ^LU ; Maximov, Ivan ^LU ; Omling, Pär ^LU ; Samuelson, Lars ^LU and Seifert, Werner ^LU (2004) In IEEE Electron Device Letters 25(4). p.164-166
- Contribution to journal › Article
Mark Resonant tunneling permeable base transistors with high transconductance
Lind, Erik ^LU ; Lindström, Peter ^LU and Wernersson, Lars-Erik ^LU (2004) In IEEE Electron Device Letters 25(10). p.678-680
- Contribution to journal › Article
2002
Mark A novel frequency-multiplication device based on three-terminal ballistic junction
Shorubalko, Ivan ^LU ; Xu, Hongqi ^LU ; Maximov, Ivan ^LU ; Nilsson, D ; Omling, Pär ^LU ; Samuelson, Lars ^LU and Seifert, Werner ^LU (2002) In IEEE Electron Device Letters 23(7). p.377-379
- Contribution to journal › Article

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