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- 2010
-
Mark
Low-frequency noise in vertical InAs nanowire FETs
- Contribution to journal › Article
- 2008
-
Mark
A novel SR latch device realized by integration of three-terminal ballistic junctions in InGaAs/InP
- Contribution to journal › Article
-
Mark
Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate
- Contribution to journal › Article
-
Mark
Heterostructure Barriers in Wrap Gated Nanowire FETs
- Contribution to journal › Article
- 2006
-
Mark
Vertical high-mobility wrap-gated InAs nanowire transistor
- Contribution to journal › Article
- 2004
-
Mark
Resonant tunneling permeable base transistors with high transconductance
- Contribution to journal › Article
-
Mark
Novel nanoelectronic triodes and logic devices with TBJs
- Contribution to journal › Article
- 2002
-
Mark
A novel frequency-multiplication device based on three-terminal ballistic junction
- Contribution to journal › Article
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