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- 2005
-
Mark
Vertical high mobility wrap-gated InAs nanowire transistor
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2003
-
Mark
Direct observation of structural relaxation in amorphous compound semiconductors
2003) In Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 206. p.1024-1027(
- Contribution to journal › Article
-
Mark
Epitaxial Growth, Processing and Characterization of Semiconductor Nanostructures
2003)(
- Thesis › Doctoral thesis (compilation)
-
Mark
One dimensional heterostructures and resonant tunneling in III-V nanowires
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2002
-
Mark
Structural characterization of amorphised InAs with synchrotron radiation
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Comparision between (111)B and (100) III-V nanowhiskers
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Optical characterisation of InAs quantum dots grown on {110} cleaved GaAs facets
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 1996
-
Mark
RHEED and RD studies of III-V semiconductors
1996)(
- Thesis › Doctoral thesis (compilation)