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- 2015
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Mark
III-V Nanowire Complementary Metal-Oxide Semiconductor Transistors Monolithically Integrated on Si
(
- Contribution to journal › Article
- 2014
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Mark
Electrical properties of GaSb/InAsSb core/shell nanowires
(
- Contribution to journal › Article
- 2013
-
Mark
Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
(
- Contribution to journal › Article
- 2012
-
Mark
Single InAs/GaSb Nanowire Low-Power CMOS Inverter
2012) In Nano Letters(
- Contribution to journal › Article
- 2011
-
Mark
Effects of crystal phase mixing on the electrical properties of InAs nanowires
(
- Contribution to journal › Article
-
Mark
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
(
- Contribution to journal › Article
- 2010
-
Mark
Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
(
- Contribution to journal › Article
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Mark
Growth Mechanism of Self-Catalyzed Group III-V Nanowires.
(
- Contribution to journal › Article