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- 2008
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Mark
High-Quality InAs/InSb Nanowire Heterostructures Grown by Metal-Organic Vapor-Phase Epitaxy.
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- Contribution to journal › Article
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InAs nanowire metal-oxide-semiconductor capacitors
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- Contribution to journal › Article
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A highly tunable lateral quantum dot realized in InGaAs/InP by an etching technique
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- Contribution to journal › Article
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Focused ion beam fabrication of novel core-shell nanowire structures
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- Contribution to journal › Article
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Magnetoresistance studies on Co/AlOX/Au and Co/AlOX/Ni/Au tunnel structures
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- Contribution to journal › Article
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Transport properties of three-terminal ballistic junctions realized by focused ion beam enhanced etching in InGaAs/InP
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- Contribution to journal › Article
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Epitaxial Integration of Nanowires in Microsystems by Local Micrometer-Scale Vapor-Phase Epitaxy
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- Contribution to journal › Article
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Individual nanometer hole-particle pairs for surface-enhanced Raman scattering
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- Contribution to journal › Article
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Specific self-assembly of single lipid vesicles in nanoplasmonic apertures in gold
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- Contribution to journal › Article
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Single gold-nanoparticle-enhanced Raman scattering of individual single-walled carbon nanotubes via atomic force microscope manipulation
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- Contribution to journal › Article
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Precursor evaluation for in situ InP nanowire doping
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- Contribution to journal › Article
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A sequential logic device realized by integration of in-plane gate transistors in InGaAs/InP
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- Contribution to journal › Article
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Visualizations of transition dipoles, charge transfer, and electron-hole coherence on electronic state transitions between excited states for two-photon absorption.
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- Contribution to journal › Article
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Polarization dependence of surface-enhanced Raman scattering in gold nanoparticle-nanowire systems
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- Contribution to journal › Article
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Monte Carlo investigation of the phase transition in the 2D Potts model with open boundary conditions
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- Contribution to journal › Article