Lennart Lindström (Former)
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- 2011
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Mark
The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?
(
- Contribution to journal › Article
- 2009
-
Mark
Trivacancy-oxygen complex in silicon: Local vibrational mode characterization
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2006
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Mark
Oxygen loss and thermal double donor formation in germanium
(
- Contribution to journal › Article
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Mark
Evolution of radiation-induced carbon-oxygen-related defects in silicon upon annealing: LVM studies
2006) In Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 253(1-2). p.210-213(
- Contribution to journal › Article
-
Mark
Evolution of radiation-induced carbon-oxygen-related defects in silicon upon annealing: LVM studies
2006) E-MRS IUMRS ICEM Spring Meet, Nice, France (2006)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2005
-
Mark
Calibration factor for determination of interstitial oxygen concentration in germanium by infrared absorption
(
- Contribution to journal › Article
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Mark
VOn (n >= 3) defects in irradiated and heat-treated silicon
(
- Contribution to journal › Article
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Mark
Characterization of oxygen dimer-enriched silicon detectors
2005) In Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment 552(1-2). p.49-55(
- Contribution to journal › Article
-
Mark
Electrically active radiation-induced defects in Czochralski-grown Si with low carbon content
(
- Contribution to journal › Article
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Mark
Radiation-hard semiconductor detectors for SuperLHC
2005) In Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment 541(1-2). p.189-201(
- Contribution to journal › Article
-
Mark
Thermal double donor annihilation and oxygen precipitation at around 650 degrees C in Czochralski-grown Si: local vibrational mode studies
(
- Contribution to journal › Article
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Mark
Electronic properties and structure of a complex incorporating a self-interstitial and two oxygen atoms in silicon
(
- Contribution to journal › Article
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Mark
Metastable VO2 complexes in silicon: experimental and theoretical modeling studies
(
- Contribution to journal › Article
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Mark
Interstitial carbon related defects in low-temperature irradiated Si: FTIR and DLTS studies
(
- Contribution to journal › Article
- 2003
-
Mark
Resonant interaction between localized and extended vibrational modes in Si: O-18 under pressure
(
- Contribution to journal › Article
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Mark
Vacancy-oxygen complex in Ge crystals
(
- Contribution to journal › Article
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Mark
Spectroscopic observation of the TDD0 in silicon
(
- Contribution to journal › Article
-
Mark
The VO2* defect in silicon
(
- Contribution to journal › Article
-
Mark
Stable hydrogen pair trapped at carbon impurities in silicon
(
- Contribution to journal › Article
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Mark
Defect reactions associated with divacancy elimination in silicon
(
- Contribution to journal › Article
-
Mark
Interaction between localized and extended modes of oxygen in silicon
(
- Contribution to journal › Article
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Mark
Effect of high hydrostatic pressure on small oxygen-related clusters in silicon: LVM studies
(
- Contribution to journal › Article
- 2002
-
Mark
Electronic properties of vacancy-oxygen complex in Ge crystals
(
- Contribution to journal › Article
-
Mark
Vibrational modes of oxygen dimers in germanium
(
- Contribution to journal › Article
-
Mark
Local vibrational modes of the oxygen-vacancy complex in germanium
(
- Contribution to journal › Article
-
Mark
Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and 6H-SiC
(
- Contribution to journal › Article
-
Mark
Carbon-oxygen-related complexes in irradiated and heat-treated silicon: IR absorption studies
(
- Contribution to journal › Article