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- 2014
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Mark
Parity independence of the zero-bias conductance peak in a nanowire based topological superconductor-quantum dot hybrid device.
(
- Contribution to journal › Article
- 2013
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Mark
Tunable zero-field Kondo splitting in a quantum dot
(
- Contribution to journal › Article
-
Mark
Zero-bias conductance peaks in Superconductor-Semiconductor Hybrid Quantum Devices: with and without Majorana fermions
2013) Lund-Tokyo-Copenhagen-Beijing Joint Workhop on Quantum Devices(
- Contribution to conference › Abstract
- 2012
-
Mark
Anomalous Zero-Bias Conductance Peak in a Nb-InSb Nanowire-Nb Hybrid Device.
(
- Contribution to journal › Article
- 2011
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Mark
Charge state readout and hyperfine interaction in a few-electron InGaAs double quantum dot
(
- Contribution to journal › Article
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Mark
Gate-Defined Quantum Devices Realized in InGaAs/InP by Incorporating a High-kappa Layer as Gate Dielectric
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Supercurrent through InAs nanowires with highly transparent superconducting contacts
(
- Contribution to journal › Article
- 2010
-
Mark
Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high-kappa dielectric
(
- Contribution to journal › Article
- 2009
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Mark
Giant, level-dependent g factors in InSb nanowire quantum dots.
(
- Contribution to journal › Article
-
Mark
Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
(
- Contribution to journal › Article
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Mark
g-factor and exchange energy in a few-electron lateral InGaAs quantum dot
(
- Contribution to journal › Article
-
Mark
Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-kappa dielectric material
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2008
-
Mark
Electron transport study of a lateral InGaAs quantum dot
(
- Contribution to journal › Article
-
Mark
A highly tunable lateral quantum dot realized in InGaAs/InP by an etching technique
(
- Contribution to journal › Article