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- 2011
-
Mark
Memristive and Memcapacitive Characteristics of a Au/Ti-HfO2-InP/InGaAs Diode
(
- Contribution to journal › Article
- 2010
-
Mark
Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high-kappa dielectric
(
- Contribution to journal › Article
-
Mark
Nonlinear electrical properties of Si three-terminal junction devices
(
- Contribution to journal › Article
- 2009
-
Mark
Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
(
- Contribution to journal › Article
-
Mark
Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-kappa dielectric material
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding