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Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1-xZrxO2

Athle, Robin LU ; Persson, Anton E.O. LU orcid ; Irish, Austin LU ; Menon, Heera LU ; Timm, Rainer LU orcid and Borg, Mattias LU orcid (2021) In ACS applied materials & interfaces 13(9). p.11089-11095
Abstract

Ferroelectric memories based on hafnium oxide are an attractive alternative to conventional memory technologies due to their scalability and energy efficiency. However, there are still many open questions regarding the optimal material stack and processing conditions for reliable device performance. Here, we report on the impact of the sputtering process conditions of the commonly used TiN top electrode on the ferroelectric properties of Hf1-xZrxO2. By manipulating the deposition pressure and chemistry, we control the preferential orientation of the TiN grains between (111) and (002). We observe that (111) textured TiN is superior to (002) texturing for achieving high remanent polarization (Pr). Furthermore, we find that additional... (More)

Ferroelectric memories based on hafnium oxide are an attractive alternative to conventional memory technologies due to their scalability and energy efficiency. However, there are still many open questions regarding the optimal material stack and processing conditions for reliable device performance. Here, we report on the impact of the sputtering process conditions of the commonly used TiN top electrode on the ferroelectric properties of Hf1-xZrxO2. By manipulating the deposition pressure and chemistry, we control the preferential orientation of the TiN grains between (111) and (002). We observe that (111) textured TiN is superior to (002) texturing for achieving high remanent polarization (Pr). Furthermore, we find that additional nitrogen supply during TiN deposition leads to >5× greater endurance, possibly by limiting the scavenging of oxygen from the Hf1-xZrxO2 film. These results help explain the large Pr variation reported in the literature for Hf1-xZrxO2/TiN and highlights the necessity of tuning the top electrode of the ferroelectric stack for successful device implementation.

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author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
CMOS integration, ferroelectric FET, ferroelectric tunnel junction, hafnium oxide, III−V, thin films
in
ACS applied materials & interfaces
volume
13
issue
9
pages
7 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:33625827
  • scopus:85102965332
ISSN
1944-8244
DOI
10.1021/acsami.1c01734
project
Development and Implementation of Ferroelectric oxides
Ultra-fast thermal processing for next-generation ferroelectric hafnia
language
English
LU publication?
yes
id
33d98a1c-29cd-45a5-9aab-2b241da97ada
date added to LUP
2021-03-31 08:54:48
date last changed
2024-06-29 10:06:29
@article{33d98a1c-29cd-45a5-9aab-2b241da97ada,
  abstract     = {{<p>Ferroelectric memories based on hafnium oxide are an attractive alternative to conventional memory technologies due to their scalability and energy efficiency. However, there are still many open questions regarding the optimal material stack and processing conditions for reliable device performance. Here, we report on the impact of the sputtering process conditions of the commonly used TiN top electrode on the ferroelectric properties of Hf1-xZrxO2. By manipulating the deposition pressure and chemistry, we control the preferential orientation of the TiN grains between (111) and (002). We observe that (111) textured TiN is superior to (002) texturing for achieving high remanent polarization (Pr). Furthermore, we find that additional nitrogen supply during TiN deposition leads to &gt;5× greater endurance, possibly by limiting the scavenging of oxygen from the Hf1-xZrxO2 film. These results help explain the large Pr variation reported in the literature for Hf1-xZrxO2/TiN and highlights the necessity of tuning the top electrode of the ferroelectric stack for successful device implementation.</p>}},
  author       = {{Athle, Robin and Persson, Anton E.O. and Irish, Austin and Menon, Heera and Timm, Rainer and Borg, Mattias}},
  issn         = {{1944-8244}},
  keywords     = {{CMOS integration; ferroelectric FET; ferroelectric tunnel junction; hafnium oxide; III−V; thin films}},
  language     = {{eng}},
  number       = {{9}},
  pages        = {{11089--11095}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{ACS applied materials & interfaces}},
  title        = {{Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf<sub>1-x</sub>Zr<sub>x</sub>O<sub>2</sub>}},
  url          = {{http://dx.doi.org/10.1021/acsami.1c01734}},
  doi          = {{10.1021/acsami.1c01734}},
  volume       = {{13}},
  year         = {{2021}},
}