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- 2010
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Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
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- Contribution to journal › Article
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Low-frequency noise in vertical InAs nanowire FETs
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- Contribution to journal › Article
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III-V Nanowires-Extending a Narrowing Road
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- Contribution to journal › Article
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Growth Mechanism of Self-Catalyzed Group III-V Nanowires.
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- Contribution to journal › Article
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Doping Incorporation in InAs nanowires characterized by capacitance measurements
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- Contribution to journal › Article
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Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
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- Contribution to journal › Letter
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Correlation-induced conductance suppression at level degeneracy in a quantum dot.
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- Contribution to journal › Article
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Temperature dependent properties of InSb and InAs nanowire field-effect transistors
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- Contribution to journal › Article
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Modelling and optimization of III/V transistors with matrices of nanowires
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- Contribution to journal › Article
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Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors
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- Contribution to journal › Article