NanoLund: Centre for Nanoscience
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- 2016
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Mark
Could the use of nanowire structures overcome some of the current limitations of brain electrode implants?
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- Contribution to journal › Debate/Note/Editorial
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Mark
Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Validation of an air–liquid interface toxicological set-up using Cu, Pd, and Ag well-characterized nanostructured aggregates and spheres
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- Contribution to journal › Article
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Mark
Slow-light-based optical frequency shifter
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- Contribution to journal › Article
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Mark
Demonstration of Sn-seeded GaSb homo- and GaAs-GaSb heterostructural nanowires
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- Contribution to journal › Article
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Mark
Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions
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- Contribution to journal › Article
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Mark
Superlattice gain in positive differential conductivity region
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- Contribution to journal › Article
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Mark
Electronic structures of [1 1 1]-oriented free-standing InAs and InP nanowires
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- Contribution to journal › Article
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Mark
ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment
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- Contribution to journal › Article
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Mark
Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
(
- Contribution to journal › Letter