Solid State Physics
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- 2002
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Mark
Defect engineering in Czochralski silicon by electron irradiation at different temperatures
2002) E-MRS 2001 Spring Meeting Symposium B Defect Engineering of Advanced Semiconductor Devices 186(1). p.121-125(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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A novel frequency-multiplication device based on three-terminal ballistic junction
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- Contribution to journal › Article
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Resonant acceptor states in uniaxially strained semiconductors
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- Contribution to journal › Article
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Metal oxide based SPM tips prepared by sol-gel method
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- Contribution to journal › Article
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Mark
Magnetization orientation dependence of the quasiparticle spectrum and hysteresis in ferromagnetic metal nanoparticles
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- Contribution to journal › Article
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Mark
Method of calculations for electron transport in multiterminal quantum systems based on real-space lattice models
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- Contribution to journal › Article
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Mark
Characteristics of electron transport through vertical double-barrier quantum-dot structures: Effects of symmetric and asymmetric variations of the lateral confinement potentials
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- Contribution to journal › Article
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Mn-induced NO dissociation on Pd(100)
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- Contribution to journal › Article
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Negative differential capacitance of quantum dots
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- Contribution to journal › Article
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Coupling between lateral modes in a vertical resonant tunneling structure
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- Contribution to journal › Article