Solid State Physics

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2013
Mark InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit.
Wallentin, Jesper ^LU ; Anttu, Nicklas ^LU ; Asoli, Damir ; Huffman, Maria ; Aberg, Ingvar ; Magnusson, Martin ^LU ; Siefer, Gerald ; Fuss-Kailuweit, Peter ; Dimroth, Frank and Witzigmann, Bernd , et al. (2013) In Science 339(6123). p.1057-1060
- Contribution to journal › Article
2012
Mark High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
Dey, Anil ^LU ; Borg, Mattias ^LU ; Ganjipour, Bahram ^LU ; Ek, Martin ^LU ; Dick Thelander, Kimberly ^LU ; Lind, Erik ^LU ; Nilsson, Peter ^LU ; Thelander, Claes ^LU and Wernersson, Lars-Erik ^LU (2012) 70th Annual Device Research Conference (DRC) p.205-206
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark High-Performance InAs Nanowire MOSFETs
Dey, Anil ^LU ; Thelander, Claes ^LU ; Lind, Erik ^LU ; Dick Thelander, Kimberly ^LU ; Borg, Mattias ^LU ; Borgström, Magnus ^LU ; Nilsson, Peter ^LU and Wernersson, Lars-Erik ^LU (2012) In IEEE Electron Device Letters 33(6). p.791-793
- Contribution to journal › Article
Mark High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
Egard, Mikael ^LU ; Ohlsson, Lars ^LU ; Ärlelid, Mats ^LU ; Persson, Karl-Magnus ^LU ; Borg, Mattias ^LU ; Lenrick, Filip ^LU ; Wallenberg, Reine ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2012) In IEEE Electron Device Letters 33(3). p.369-371
- Contribution to journal › Article
Mark Anomalous Zero-Bias Conductance Peak in a Nb-InSb Nanowire-Nb Hybrid Device.
Deng, Mingtang ^LU ; Yu, C L ; Huang, Guangyao ^LU ; Larsson, Marcus ^LU ; Caroff, P and Xu, Hongqi ^LU (2012) In Nano Letters 12(12). p.6414-6419
- Contribution to journal › Article
Mark 1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors
Delker, Collin J. ; Kim, Seongmin ; Borg, Mattias ^LU ; Wernersson, Lars-Erik ^LU and Janes, David B. (2012) In IEEE Transactions on Electron Devices 59(7). p.1980-1987
- Contribution to journal › Article
Mark Realizing Lateral Wrap-Gated Nanowire FETs: Controlling Gate Length with Chemistry Rather than Lithography.
Storm, Kristian ^LU ; Nylund, Gustav ^LU ; Samuelson, Lars ^LU and Micolich, Adam P (2012) In Nano Letters 12(1). p.1-6
- Contribution to journal › Article
Mark Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
Persson, Karl-Magnus ^LU ; Berg, Martin ^LU ; Borg, Mattias ^LU ; Wu, Jun ^LU ; Sjöland, Henrik ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2012) Device Research Conference (DRC), 2012 70th Annual In IEEE Electron Device Letters p.195-196
- Contribution to journal › Published meeting abstract
Mark Electron Transfer in Quantum-Dot-Sensitized ZnO Nanowires: Ultrafast Time-Resolved Absorption and Terahertz Study
Zidek, Karel ^LU ; Zheng, Kaibo ^LU ; Ponseca, Carlito ^LU ; Messing, Maria ^LU ; Wallenberg, Reine ^LU ; Chabera, Pavel ^LU ; Qenawy, Mohamed ^LU ; Sundström, Villy ^LU and Pullerits, Tönu ^LU (2012) In Journal of the American Chemical Society 134(29). p.12110-12117
- Contribution to journal › Article
Mark Single InAs/GaSb Nanowire Low-Power CMOS Inverter
Dey, Anil ^LU ; Svensson, Johannes ^LU ; Borg, Mattias ^LU ; Ek, Martin ^LU and Wernersson, Lars-Erik ^LU (2012) In Nano Letters
- Contribution to journal › Article

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