Ivan Maximov
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- 2006
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Mark
Fabrication and electron transport study of three-terminal InAs nanowire junctions
(2006) 14th Intl Symp “Nanostructures: Physics and Technology”, 2006
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electrical properties of three-terminal InAs nanowire junctions
(2006) ICPS 2006, Vienna, Austria, July 24-28 2006 1
- Contribution to conference › Paper, not in proceeding
- 2005
-
Mark
Microwave detection at 110 GHz by nanowires with broken symmetry
- Contribution to journal › Article
-
Mark
Nanometer-scale two-terminal semiconductor memory operating at room temperature
- Contribution to journal › Article
-
Mark
An alignment procedure for nanoimprint lithography at the sub-20 nm level
(2005) 49th Intl Conf on Electron, Ion, and Photon Beam Technol and Nanofabr, Orlando, Fl, USA (2005)
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Nanoimprint technology for fabrication of tunable grating structures
(2005) 31st Intl Conf Micro- and Nano-Engineering, 2005
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electrical contacts technology for single nanowires and molecules
(2005)
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Sulfur passivation for formation of Ohmic contacts to InAs nanowire devices
(2005) 31st Intl Conf Micro- and Nano-Engineering, 2005
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2004
-
Mark
Nanoelectrochemical transducers for (bio-) chemical sensor applications fabricated by nanoimprint lithography
- Contribution to journal › Article
-
Mark
Novel nanoelectronic triodes and logic devices with TBJs
- Contribution to journal › Article
