Vanya Darakchieva
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- 2022
-
Mark
Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN : Understanding Nucleation and Design of Growth Strategies
- Contribution to journal › Article
-
Mark
Thermal conductivity of AlxGa1−xN (0≤x≤1) epitaxial layers
- Contribution to journal › Article
-
Mark
Ti thin films deposited by high-power impulse magnetron sputtering in an industrial system: Process parameters for a low surface roughness
- Contribution to journal › Article
-
Mark
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
- Contribution to journal › Article
-
Mark
Strain and Composition Dependencies of the Near-Band-Gap Optical Transitions in Monoclinic (AlxGa1−x)2O3 Alloys with Coherent Biaxial In-Plane Strain on Ga2O3(010)
- Contribution to journal › Article
-
Mark
Doped semiconducting polymer nanoantennas for tunable organic plasmonics
- Contribution to journal › Article
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Mark
Linear strain and stress potential parameters for the three fundamental band to band transitions in β-Ga2O3
- Contribution to journal › Article
-
Mark
Epitaxial growth of
β
-Ga
2
O
3
by hot-wall MOCVD
- Contribution to journal › Article
-
Mark
Infrared-active phonon modes and static dielectric constants in -(AlxGa 1-x)2O3(0.18 ≤ x ≤ 0.54) alloys
- Contribution to journal › Article
-
Mark
Terahertz electron paramagnetic resonance generalized spectroscopic ellipsometry : The magnetic response of the nitrogen defect in 4H-SiC
- Contribution to journal › Article
