Zhaoxia Bi (Former)
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- 2015
-
Mark
Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence
- Contribution to journal › Article
- 2014
-
Mark
Electrical Characterization of Nanowire-Based Modular and Defect Free GaN µ-Substrate
(2014) MRS Spring Meeting, 2014
- Contribution to conference › Abstract
-
Mark
Selectively grown III-N μ-substrates for defect reduction and lattice matching
(2014) 17th International Conference on Metalorganic Vapor Phase Epitaxy, 2014
- Contribution to conference › Abstract
-
Mark
InN Quantum Dots on GaN Nanowires Grown by MOVPE
(2014) MRS Spring Meeting, 2014
- Contribution to conference › Abstract
-
Mark
InN quantum dots on GaN nanowires grown by MOVPE
(2014) 10th International Conference on Nitride Semiconductors (ICNS) In physica status solidi (c) 11. p.421-424
- Contribution to journal › Article
- 2011
-
Mark
Nucleation and initial stages of growth of GaN nanowires for LEDs by selective-area MOVPE
(2011) 9th Int. Conf. on Nitride Semiconductors
- Contribution to conference › Paper, not in proceeding
- 2007
-
Mark
Electrospraying of colloidal nanoparticles for seeding of nanostructure growth
- Contribution to journal › Article
-
Mark
Low-temperature MOCVD growth of InN buffer layers with indium pre-deposition technology
- Contribution to journal › Article
- 2006
-
Mark
Electrospraying of individual colloidal nanoparticles for seeding the growth of nanowires
(2006) 7th International Aerosol Conference, 2006
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electrospraying of individual colloidal nanoparticles for seeding the growth of nanowires
(2006) 2nd International Symp on Semicond Nanowires, 2006
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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