Lars-Erik Wernersson
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- 2004
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Mark
3D metal-semiconductor devices and other nanoelectronic devices
2004) NSF/SSF Workshop on Nanoscience and Nanotechnology, 2004(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2003
-
Mark
InP hot electron transistors with a buried metal gate
(
- Contribution to journal › Article
-
Mark
Highly functional tunnelling devices integrated in 3D
(
- Contribution to journal › Article
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Mark
Transport through an isolated artificial molecule formed from stacked self-assembled quantum dots
(
- Contribution to journal › Article
-
Mark
Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
(
- Contribution to journal › Article
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Mark
Strain in GaP/GaAs and GaAs/GaP resonant tunnelling heterostructures
(
- Contribution to journal › Article
-
Mark
Resonant Tunneling Permeable Base Transistor for RF applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Tunneling spectroscopy of a quantum dot through a single impurity
(
- Contribution to journal › Article
- 2002
-
Mark
Three-dimensional integrated resonant tunneling transistor with multiple peaks
(
- Contribution to journal › Article
-
Mark
Nanoscale tungsten aerosol particles embedded in GaAs
(
- Contribution to journal › Article