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- 2022
-
Mark
Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
(
- Contribution to journal › Article
- 2021
-
Mark
Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
(
- Contribution to journal › Article
- 2020
-
Mark
Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
(
- Contribution to journal › Article
-
Mark
Cross-Point Arrays with Low-Power ITO-HfO2 Resistive Memory Cells Integrated on Vertical III-V Nanowires
(
- Contribution to journal › Article
-
Mark
Low-Power Resistive Memory Integrated on III-V Vertical Nanowire MOSFETs on Silicon
(
- Contribution to journal › Article
-
Mark
A method for estimating defects in ferroelectric thin film MOSCAPs
(
- Contribution to journal › Article
- 2019
-
Mark
Integration of InSb on Si by Rapid Melt Growth
2019) 21th International Vacuum Congress(
- Contribution to conference › Abstract
-
Mark
Investigation of Reverse Filament Formation in ITO/HfO2-based RRAM
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2017
-
Mark
Record performance for junctionless transistors in InGaAs MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Junctionless tri-gate InGaAs MOSFETs
(
- Contribution to journal › Article