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- 2008
-
Mark
Effects of growth conditions on the crystal structure of gold-seeded GaP nanowires
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Characterization of GaSb nanowires grown by MOVPE
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2007
-
Mark
Low-temperature MOCVD growth of InN buffer layers with indium pre-deposition technology
(
- Contribution to journal › Article
-
Mark
InAs nanowires grown by MOVPE
(
- Contribution to journal › Article
-
Mark
The structure of <1 1 1 > B oriented GaP nanowires
(
- Contribution to journal › Article
-
Mark
Single-crystal growth and structure determination of misfit layer oxide [Sr2TlO3][CoO2]1.77
(
- Contribution to journal › Article
- 2006
-
Mark
Growth and characterization of defect free GaAs nanowires
(
- Contribution to journal › Article
-
Mark
Optimization of Au-assisted InAs nanowires grown by MOVPE
(
- Contribution to journal › Article
- 2005
-
Mark
InAs epitaxial lateral overgrowth of W masks
(
- Contribution to journal › Article
- 2004
-
Mark
Single-crystalline Ge grown epitaxially on oxidized and reduced Ge/Si(100) islands
(
- Contribution to journal › Article