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- 2009
-
Mark
60 GHz Wavelet Generator for Impulse Radio Applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
60 GHz Ultra-Wideband Impulse Radio Transmitter
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
60 GHz Wavelet Generator for Impulse Radio Applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Fabrication Tehnology for RF Cirquit Implementation of Vertical III-V MOSFETs
2009) Swedish System-on-Chip Conference, SSoCC '09(
- Contribution to conference › Abstract
- 2008
-
Mark
Gated tunnel diode pulse generator
2008) GigaHertz Symposium In Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology p.37-37(
- Contribution to journal › Published meeting abstract
-
Mark
Improved breakdown voltages for type I InP/InGaAs DHBTs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Heterostructure Barriers in Wrap Gated Nanowire FETs
(
- Contribution to journal › Article
- 2007
-
Mark
Nanowire field-effect transistor
(
- Contribution to journal › Article
-
Mark
High Tuning-Range VCO Using a Gated Tunnel Diode
2007) 2007 International Conference on Solid State Materials and Devices In [Publication information missing] p.798-799(
- Contribution to journal › Published meeting abstract
-
Mark
Pulse Generator with Gated Tunnel Diode
2007) Swedish System-on-Chip Conference 2007 (SSoCC’07)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2006
-
Mark
InAsP/InAs nanowire heterostructure field effect transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor
(
- Contribution to journal › Article
-
Mark
Vertical InAs nanowire wrap-gate FETs
2006) Semiconductor Nanowires Symposium, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2005
-
Mark
Wrap-gated InAs nanowire field-effect transistor
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InAs epitaxial lateral overgrowth of W masks
(
- Contribution to journal › Article
-
Mark
A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation
(
- Contribution to journal › Article
-
Mark
MOVPE of InAs epitaxial overgrowth of W masks
2005) 12 Intl Conf on Narrow Gap Semiconductors, Toulouse, France (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2004
-
Mark
Nanoelectronic pulse generators based on gated resonant tunnelling diodes
(
- Contribution to journal › Article
-
Mark
Tunneling Based Electronic Devices
2004)(
- Thesis › Doctoral thesis (compilation)
-
Mark
SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion
(
- Contribution to journal › Article