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- 2020
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Mark
Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs
(
- Contribution to journal › Article
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Mark
Vertical nanowire III–V MOSFETs with improved high-frequency gain
(
- Contribution to journal › Article
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Mark
Weyl Semi-Metal-Based High-Frequency Amplifiers
2020) 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 In Technical Digest - International Electron Devices Meeting, IEDM 2019-December.(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
(
- Contribution to journal › Article
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Mark
Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si
(
- Contribution to journal › Article
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Mark
Atomic Layer Deposition of Hafnium Oxide on InAs : Insight from Time-Resolved in Situ Studies
(
- Contribution to journal › Article
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Mark
Mobility of near surface MOVPE grown InGaAs/InP quantum wells
(
- Contribution to journal › Article
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Mark
III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications
(
- Contribution to journal › Article
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Mark
Low temperature scanning tunneling microscopy and spectroscopy on laterally grown InxGa1-xAs nanowire devices
(
- Contribution to journal › Article
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Mark
Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
(
- Contribution to journal › Article
- 2019
-
Mark
Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
(
- Contribution to journal › Article
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Mark
Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
2019) In Microelectronic Engineering(
- Contribution to journal › Article
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Mark
Reducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap
(
- Contribution to journal › Article
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Mark
Fabrication of Tunnel FETs demonstrating sub-thermal subthreshold slope
2019) 21th International Vacuum Congress(
- Contribution to conference › Abstract
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Mark
Comparison of Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
2019) Insulating Films on Semiconductors (INFOS)(
- Contribution to conference › Paper, not in proceeding
- 2018
-
Mark
RF Characterisation of Vertical III-V Nanowire Tunnel FETs
2018) Swedish Microwave Days 2018(
- Contribution to conference › Paper, not in proceeding
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Mark
Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
(
- Contribution to journal › Article
-
Mark
Fabrication of Tunnel Field-Effect Transistors
2018) Swedish Microwave Days 2018(
- Contribution to conference › Paper, not in proceeding
-
Mark
Capacitance Measurements in Vertical III-V Nanowire TFETs
(
- Contribution to journal › Letter
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Mark
A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs
(
- Contribution to journal › Article