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- 2024
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Mark
Source Design of Vertical III-V Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
- 2023
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Mark
Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors
(
- Contribution to journal › Article
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Mark
Low-Power, Self-Aligned Vertical InGaAsSb NW PMOS With S < 100 mV/dec
(
- Contribution to journal › Article
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Mark
Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
(
- Contribution to journal › Article
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Mark
Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures
2023) 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 In IEEE International Integrated Reliability Workshop Final Report(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding