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- 2013
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Mark
Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
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Mark
InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces
(
- Contribution to journal › Article
- 2012
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Mark
High-k oxides on InAs 100 and 111B surfaces
2012) 5th International Symposium on Dielectrics for Nanosystems - Materials Science, Processing, Reliability and Manufacturing as Part of the 221st Meeting of the Electrochemical-Society (ECS) 45(3). p.61-67(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Performance Evaluation of III–V Nanowire Transistors
(
- Contribution to journal › Article
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Mark
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
(
- Contribution to journal › Article
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Mark
In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator
(
- Contribution to journal › Article
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Mark
Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
(
- Contribution to journal › Article
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Mark
High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
2012) GigaHertz Symposium 2012(
- Contribution to conference › Paper, not in proceeding
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Mark
High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week In Physica Status Solidi. C, Current Topics in Solid State Physics 9(2). p.350-353(
- Contribution to journal › Article
-
Mark
Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
(
- Contribution to journal › Published meeting abstract