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- 2012
-
Mark
High-Performance InAs Nanowire MOSFETs
(
- Contribution to journal › Article
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Mark
High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
(
- Contribution to journal › Article
-
Mark
InAs Nanowires for High Frequency Electronics
2012) GigaHertz Symposium 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
Design of RF Properties for Vertical Nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
Memristive and Memcapacitive Characteristics of a Au/Ti-HfO2-InP/InGaAs Diode
(
- Contribution to journal › Article
-
Mark
Bias Stabilization of Negative Differential Conductance Oscillators Operated in Pulsed Mode
(
- Contribution to journal › Article
-
Mark
Impulse-based 4 Gbit/s radio link at 60 GHz
(
- Contribution to journal › Article
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Mark
60 GHz impulse radio measurements
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Temperature and annealing effects on InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding