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- 2015
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Mark
Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric
(
- Contribution to journal › Article
- 2014
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Mark
In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
High Transconductance, f(t) and f(max) in In0.63Ga0.37As FinFETs Using A Novel Fin Formation Technique
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
In GaAs MOSFETs with InP Drain
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
In0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels
(
- Contribution to journal › Article
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Mark
Intrinsic Performance of InAs Nanowire Capacitors
(
- Contribution to journal › Article
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Mark
Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering
(
- Contribution to journal › Article
-
Mark
Asymmetric InGaAs MOSFETs with InGaAs source and InP drain
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistors
(
- Contribution to journal › Article
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Mark
Modeling of n-InAs metal oxide semiconductor capacitors with high-kappa gate dielectric
(
- Contribution to journal › Article