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- 2022
-
Mark
On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC
(
- Contribution to journal › Article
-
Mark
Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect
(
- Contribution to journal › Article
-
Mark
Epitaxial growth of
β
-Ga
2
O
3
by hot-wall MOCVD
(
- Contribution to journal › Article
- 2020
-
Mark
Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device-Quality GaN Templates
(
- Contribution to journal › Article
- 2017
-
Mark
Optical properties of III-nitride semiconductors
2017) p.87-116(
- Chapter in Book/Report/Conference proceeding › Book chapter
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