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- 2024
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Mark
Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere
(
- Contribution to journal › Article
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Mark
Electron effective mass in GaN revisited : New insights from terahertz and mid-infrared optical Hall effect
(
- Contribution to journal › Article
- 2023
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Mark
On the thermal conductivity anisotropy in wurtzite GaN
(
- Contribution to journal › Article
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Mark
Thermal conductivity of ScxAl1−xN and YxAl1−xN alloys
(
- Contribution to journal › Article
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Mark
High-quality N-polar GaN optimization by multi-step temperature growth process
(
- Contribution to journal › Article
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Mark
Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
(
- Contribution to journal › Article
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Mark
Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures
(
- Contribution to journal › Article
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Mark
Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
(
- Contribution to journal › Article
- 2022
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Mark
Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN : Understanding Nucleation and Design of Growth Strategies
(
- Contribution to journal › Article
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Mark
Thermal conductivity of AlxGa1−xN (0≤x≤1) epitaxial layers
(
- Contribution to journal › Article
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Mark
On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC
(
- Contribution to journal › Article
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Mark
Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect
(
- Contribution to journal › Article
-
Mark
Epitaxial growth of
β
-Ga
2
O
3
by hot-wall MOCVD
(
- Contribution to journal › Article
- 2020
-
Mark
Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device-Quality GaN Templates
(
- Contribution to journal › Article
- 2017
-
Mark
Optical properties of III-nitride semiconductors
2017) p.87-116(
- Chapter in Book/Report/Conference proceeding › Book chapter