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- 2025
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Mark
High-frequency/high-field electron paramagnetic resonance generalized spectroscopic ellipsometry characterization of Cr3+ in β-Ga2O3
- Contribution to journal › Article
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Mark
Magnetic Lyddane-Sachs-Teller Relation
- Contribution to journal › Article
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Mark
Strain-stress relationships for coherent in-plane strain in heterostructures with monoclinic crystal systems : β-(AlxGa1−x)2O3 on (h0l)β-Ga2O3 as example
- Contribution to journal › Article
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Mark
2DEG Properties of AlScN/GaN and AlYN/GaN HEMTs Determined by Terahertz Optical Hall Effect
- Contribution to journal › Article
- 2024
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Mark
Bloch equations in terahertz magnetic-resonance ellipsometry
- Contribution to journal › Article
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Mark
COMPREHENSIVE SEMICONDUCTOR SCIENCE AND TECHNOLOGY, SECOND EDITION : Volumes 1-3
(2024) 1-3.
- Book/Report › Book
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Mark
Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
- Chapter in Book/Report/Conference proceeding › Book chapter
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Mark
Effective uniaxial dielectric function tensor and optical phonons in (201)-oriented β-Ga2O3 films with equally distributed sixfold-rotation domains
- Contribution to journal › Article
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Mark
Characterization of semiconductors by spectroscopic ellipsometry
- Chapter in Book/Report/Conference proceeding › Book chapter
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Mark
Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique
- Contribution to journal › Article
