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- 2009
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Mark
Growth of vertical InAs nanowires on heterostructured substrates
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- Contribution to journal › Article
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Mark
Giant, level-dependent g factors in InSb nanowire quantum dots.
(
- Contribution to journal › Article
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Mark
MOVPE Growth and Structural Characterization of Extremely Lattice-Mismatched InP-InSB Nanowire Heterostructures
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch.
(
- Contribution to journal › Article
-
Mark
Deposition of HfO2 on InAs by atomic-layer deposition
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Gated tunnel diode in oscillator applications with high frequency tuning
(
- Contribution to journal › Article
- 2008
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Mark
Guest Editorial Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology
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- Contribution to journal › Debate/Note/Editorial
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Mark
Development of a Vertical Wrap-Gated InAs FET
(
- Contribution to journal › Article
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Mark
Characterization of GaSb nanowires grown by MOVPE
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate
(
- Contribution to journal › Article