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- 2005
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Mark
Mass transport model for semiconductor nanowire growth
- Contribution to journal › Article
- 2004
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Mark
Defect-free InP nanowires grown in [001] direction on InP(001)
- Contribution to journal › Article
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Mark
Charging control of InP/GaInP quantum dots by heterostructure design
- Contribution to journal › Article
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Mark
Interband transitions in InAs quantum dots in InP studied by photoconductivity and photoluminescence techniques
- Contribution to journal › Article
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Mark
Direct imaging of the atomic structure inside a nanowire by scanning tunnelling microscopy
- Contribution to journal › Article
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Mark
Photoexcitation of excitons in self-assembled quantum dots
- Contribution to journal › Article
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Mark
Stacked InAs quantum dots in InP studied by cross-sectional scanning tunnelling microscopy
- Contribution to journal › Article
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Mark
Electrical properties of InAs-based nanowires
(2004) Electronic Properties of Synthetic Nanostructures. XVIII International Winterschool/Euroconference on Electronic Properties of Novel Materials 723. p.449-452
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Synthesis of branched 'nanotrees' by controlled seeding of multiple branching events
- Contribution to journal › Article
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Mark
Intersubband photoconductivity of self-assembled InAs quantum dots embedded in InP
- Contribution to journal › Article
