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- 2024
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Characterization of semiconductors by spectroscopic ellipsometry
(
- Chapter in Book/Report/Conference proceeding › Book chapter
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Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique
(
- Contribution to journal › Article
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Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere
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- Contribution to journal › Article
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Effective uniaxial dielectric function tensor and optical phonons in (2 ¯ 01)-oriented β - Ga2 O3 films with equally distributed sixfold-rotation domains
(
- Contribution to journal › Article
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Mark
Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
2024) In Physica Status Solidi. A: Applications and Materials Science(
- Contribution to journal › Article
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Mark
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
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- Contribution to journal › Article
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Mark
Bloch equations in terahertz magnetic-resonance ellipsometry
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- Contribution to journal › Article
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Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect
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- Contribution to journal › Article
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Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
(
- Chapter in Book/Report/Conference proceeding › Book chapter
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Mark
Determination of the conduction and valence band offsets at the Co3O4/3C-SiC p-n heterojunction
(
- Contribution to journal › Article