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- 2024
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Mark
Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
2024) In Physica Status Solidi. A: Applications and Materials Science(
- Contribution to journal › Article
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Mark
PREFACE TO VOLUME 2
(
- Chapter in Book/Report/Conference proceeding › Foreword/Postscript
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Mark
Characterization of semiconductors by spectroscopic ellipsometry
(
- Chapter in Book/Report/Conference proceeding › Book chapter
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Mark
COMPREHENSIVE SEMICONDUCTOR SCIENCE AND TECHNOLOGY, SECOND EDITION : Volumes 1-3
2024) 1-3.(
- Book/Report › Book
- 2023
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Mark
Thermal conductivity of ScxAl1−xN and YxAl1−xN alloys
(
- Contribution to journal › Article
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Mark
Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization
(
- Contribution to journal › Article
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Mark
THz Spectroscopic Electron Paramagnetic Resonance of the Fe3+Defect in GaN
2023) 48th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2023 In International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Observations of very fast electron traps at SiC/high-κ dielectric interfaces
(
- Contribution to journal › Article
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Mark
Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
(
- Contribution to journal › Article
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Mark
On the thermal conductivity anisotropy in wurtzite GaN
(
- Contribution to journal › Article