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- 2010
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Mark
Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
(
- Contribution to journal › Article
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Mark
Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
(
- Contribution to journal › Letter
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Mark
Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors
(
- Contribution to journal › Article
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Mark
Modelling and optimization of III/V transistors with matrices of nanowires
(
- Contribution to journal › Article
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Mark
Temperature dependent properties of InSb and InAs nanowire field-effect transistors
(
- Contribution to journal › Article
-
Mark
Admittance Matching of 60 GHz Rectangular Dielectric Resonator Antennas for Integrated Impulse Radio
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Tunneling-based devices and circuits
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
A 60 GHz super-regenerative oscillator for implementation in an impulse radio receiver
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Vertical InAs nanowire wrap gate transistors for integration on a Si platform
2010) GigaHertz Symposium, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
High-k oxides on (100), (111)A and (111)B InAs substrates
2010) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials(
- Contribution to conference › Paper, not in proceeding