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- 2012
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Mark
Electrical Properties of Top-gate GaSb/InAs Core/Shell Nanowire Field Effect Transistor
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
Single InAs/GaSb Nanowire Low-Power CMOS Inverter
2012) In Nano Letters(
- Contribution to journal › Article
-
Mark
Current Modulation in GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
Electrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
High quality InAs and GaSb thin layers grown on Si (111)
(
- Contribution to journal › Article
-
Mark
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
(
- Contribution to journal › Article
-
Mark
Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
(
- Contribution to journal › Article
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Mark
Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
(
- Contribution to journal › Article
-
Mark
High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
2011) IEEE International Electron Devices Meeting (IEDM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2009
-
Mark
Electrical characterization of thin InAs films grown on patterned W/GaAs substrates
(
- Contribution to journal › Article