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- 2011
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Mark
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
(
- Contribution to journal › Article
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Mark
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
(
- Contribution to journal › Article
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Mark
Impulse-based 4 Gbit/s radio link at 60 GHz
(
- Contribution to journal › Article
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Mark
Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
(
- Contribution to journal › Article
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Mark
60 GHz impulse radio measurements
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Design of RF Properties for Vertical Nanowire MOSFETs
(
- Contribution to journal › Article
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Mark
Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
(
- Contribution to journal › Article
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Mark
Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
(
- Contribution to journal › Article
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Mark
Transient studies on InAs/HfO2 nanowire capacitors
(
- Contribution to journal › Article
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Mark
Temperature and annealing effects on InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding