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- 2013
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Mark
Synthesis and properties of antimonide nanowires
(
- Contribution to journal › Scientific review
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Mark
Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
(
- Contribution to journal › Article
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Mark
InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces
(
- Contribution to journal › Article
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Mark
Wideband and Non-Dispersive Wavelet Transmission using Leaky Lens Antenna
(
- Contribution to journal › Article
-
Mark
GaSb nanowire pFETs for III-V CMOS
2013) 71th Annual Device Research Conference (DRC) In IEEE Device Research Conference. Proceedings p.13-14(
- Contribution to journal › Published meeting abstract
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Mark
RF reliability of gate last InGaAs nMOSFETs with high-k dielectric
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Diameter-Dependent Photocurrent in InAsSb Nanowire Infrared Photodetectors.
(
- Contribution to journal › Article
- 2012
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Mark
High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
(
- Contribution to journal › Article
-
Mark
Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
(
- Contribution to journal › Published meeting abstract