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- 2018
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Mark
A Self-aligned Gate-last Process applied to All-III-V CMOS on Si
(
- Contribution to journal › Article
- 2017
-
Mark
Growth of wurtzite AlxGa1-xP nanowire shells and characterization by Raman spectroscopy
(
- Contribution to journal › Article
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Mark
Conduction Band Offset and Polarization Effects in InAs Nanowire Polytype Junctions
(
- Contribution to journal › Article
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Mark
Simplifying Nanowire Hall Effect Characterization by Using a Three-Probe Device Design
(
- Contribution to journal › Article
-
Mark
InxGa1-xP Nanowire Growth Dynamics Strongly Affected by Doping Using Diethylzinc
(
- Contribution to journal › Article
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Mark
Growth and optical properties of InxGa1−xP nanowires synthesized by selective-area epitaxy
(
- Contribution to journal › Article
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Mark
Towards high efficiency nanowire solar cells
(
- Contribution to journal › Article
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Mark
Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects
(
- Contribution to journal › Article
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Mark
Atomic Scale Characterization of III-V Nanowire Surfaces
2017)(
- Thesis › Doctoral thesis (compilation)
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Mark
Electronic Structure Changes Due to Crystal Phase Switching at the Atomic Scale Limit
(
- Contribution to journal › Article