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- 2022
-
Mark
Ferroelectric-Antiferroelectric Transition of Hf1- xZrxO2on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2
- Contribution to journal › Article
-
Mark
Observation of the Multilayer Growth Mode in Ternary InGaAs Nanowires
- Contribution to journal › Article
-
Mark
Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
- Contribution to journal › Article
- 2021
-
Mark
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
- Contribution to journal › Article
-
Mark
III-V Nanowire MOSFET High-Frequency Technology Platform
(2021)
- Thesis › Doctoral thesis (compilation)
-
Mark
Kinetic and Thermodynamic Modeling of Nanowire Growth
(2021)
- Thesis › Doctoral thesis (compilation)
-
Mark
High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
- Contribution to journal › Article
-
Mark
Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications
(2021)
- Thesis › Doctoral thesis (compilation)
- 2020
-
Mark
Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs
- Contribution to journal › Article
-
Mark
Electrical Characterisation of III-V Nanowire MOSFETs
(2020) In Series of Licentiate and Doctoral Theses
- Thesis › Doctoral thesis (compilation)
