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- 2015
-
Mark
High Frequency InGaAs Nanowire MOSFETs
(2015) 37th IEEE International Symposium on Workload Characterization, IISWC 2015
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2014
-
Mark
InAs nanowire MOSFET differential active mixer on Si-substrate
- Contribution to journal › Article
-
Mark
In0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels
- Contribution to journal › Article
-
Mark
High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates
- Contribution to journal › Article
-
Mark
RF and DC Analysis of Stressed InGaAs MOSFETs
- Contribution to specialist publication or newspaper › Specialist publication article
-
Mark
Nanowire Transistors and RF Circuits for Low-Power Applications
(2014)
- Thesis › Doctoral thesis (compilation)
-
Mark
Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
- Contribution to journal › Article
- 2013
-
Mark
Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
- Contribution to journal › Article
-
Mark
Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors
- Contribution to journal › Article
-
Mark
RF reliability of gate last InGaAs nMOSFETs with high-k dielectric
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
