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- 2014
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Mark
InN quantum dots on GaN nanowires grown by MOVPE
2014) 10th International Conference on Nitride Semiconductors (ICNS) In physica status solidi (c) 11. p.421-424(
- Contribution to journal › Article
- 2013
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Mark
Fluorescent Nanowire Heterostructures as a Versatile Tool for Biology Applications
(
- Contribution to journal › Article
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Mark
Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrays
(
- Contribution to journal › Article
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Mark
Structural investigation of GaInP nanowires using X-ray diffraction
(
- Contribution to journal › Article
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Mark
Surface science of free standing semiconductor nanowires
(
- Contribution to journal › Article
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Mark
Cu particle seeded InP InAs axial nanowire heterostructures
(
- Contribution to journal › Article
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Mark
Zincblende-to-wurtzite interface improvement by group III loading in Au-seeded GaAs nanowires
(
- Contribution to journal › Article
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Mark
Large-energy-shift photon upconversion in degenerately doped InP nanowires by direct excitation into the electron gas
(
- Contribution to journal › Article
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Mark
Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates
(
- Contribution to journal › Article
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Mark
Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo(phenylene vinylene)s
(
- Contribution to journal › Article