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- 2017
-
Mark
Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2016
-
Mark
RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
(
- Contribution to journal › Article
-
Mark
3-D Integrated Track-and-Hold Circuit Using InAs Nanowire MOSFETs and Capacitors
(
- Contribution to journal › Article
-
Mark
Vertical III-V/High-k Nanowire MOS Capacitors and Transistors
2016) In Lund University Faculty of Medicine Doctoral Dissertation Series(
- Thesis › Doctoral thesis (monograph)
- 2013
-
Mark
Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
- 2012
-
Mark
Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
(
- Contribution to journal › Published meeting abstract
-
Mark
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
(
- Contribution to journal › Article
-
Mark
High-k oxides on InAs 100 and 111B surfaces
2012) 5th International Symposium on Dielectrics for Nanosystems - Materials Science, Processing, Reliability and Manufacturing as Part of the 221st Meeting of the Electrochemical-Society (ECS) 45(3). p.61-67(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding