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- 2011
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Mark
Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
(
- Contribution to journal › Article
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Mark
Dual-gate induced InP nanowire diode
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
(
- Contribution to journal › Article
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Mark
Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
(
- Contribution to journal › Article
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Mark
15 nm diameter InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Inverter circuits based on vertical InAs nanowire MOSFETs
2011) Swedish System-on-Chip Conference, SSoCC 2011(
- Contribution to conference › Paper, not in proceeding
- 2010
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Mark
InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors.
(
- Contribution to journal › Article
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Mark
High Frequency Performance of Vertical InAs Nanowire MOSFET
2010) 22nd International Conference on Indium Phosphide and Related Materials(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
(
- Contribution to journal › Article
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Mark
Low-frequency noise in vertical InAs nanowire FETs
(
- Contribution to journal › Article
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Mark
Crystal Phase Engineering in Single InAs Nanowires.
(
- Contribution to journal › Article
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Mark
III-V Nanowires-Extending a Narrowing Road
(
- Contribution to journal › Article
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Mark
The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.
(
- Contribution to journal › Article
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Mark
Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
(
- Contribution to journal › Letter
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Mark
Time-resolved photoluminescence investigations on HfO2-capped InP nanowires
(
- Contribution to journal › Article
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Mark
Temperature dependent properties of InSb and InAs nanowire field-effect transistors
(
- Contribution to journal › Article
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Mark
Vertical InAs nanowire wrap gate transistors for integration on a Si platform
2010) GigaHertz Symposium, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
InAs/GaSb heterostructure nanowires for tunnel FETs
2010) 15th international conference on metal organic vapor phase epitaxy, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
Vertical dual wrapgated-induced field effect diode
2010) 30th International Conference on the Physics of Semiconductors, 2010(
- Contribution to conference › Paper, not in proceeding