Nano-lup-obsolete
1 – 20 of 102
- show: 20
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=" "
width=" "
height=" "
allowtransparency="true"
frameborder="0">
</iframe>
- 2016
-
Mark
Vertical III-V/High-k Nanowire MOS Capacitors and Transistors
2016) In Lund University Faculty of Medicine Doctoral Dissertation Series(
- Thesis › Doctoral thesis (monograph)
-
Mark
RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
(
- Contribution to journal › Article
- 2015
-
Mark
Vertical InAs Nanowire Devices and RF Circuits
(
- Thesis › Doctoral thesis (compilation)
-
Mark
InAs Nanowire Devices and Circuits
(
- Thesis › Doctoral thesis (compilation)
-
Mark
Compact and Efficient Millimetre-Wave Circuits for Wideband Applications
2015) In Series of licentiate and doctoral theses(
- Thesis › Doctoral thesis (compilation)
- 2014
-
Mark
InAs nanowire MOSFET differential active mixer on Si-substrate
(
- Contribution to journal › Article
-
Mark
Intrinsic Performance of InAs Nanowire Capacitors
(
- Contribution to journal › Article
-
Mark
Nanowire Transistors and RF Circuits for Low-Power Applications
2014)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Time Domain Material Characterizations Using Leaky Lens Antennas
(
- Contribution to conference › Abstract
- 2013
-
Mark
Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
-
Mark
Pulse transmission using leaky lens antenna and RTD-MOSFET wavelet generator
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
-
Mark
Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors
(
- Contribution to journal › Article
-
Mark
Wideband and Non-Dispersive Wavelet Transmission using Leaky Lens Antenna
(
- Contribution to journal › Article
- 2012
-
Mark
Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
(
- Contribution to journal › Published meeting abstract
-
Mark
Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
(
- Contribution to journal › Article
-
Mark
Performance Evaluation of III–V Nanowire Transistors
(
- Contribution to journal › Article
-
Mark
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
(
- Contribution to journal › Article
-
Mark
Millimeter-Wave Impulse Radio
2012)(
- Thesis › Doctoral thesis (compilation)
- 2011
-
Mark
InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
(
- Contribution to journal › Article