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- 2024
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Mark
Electron effective mass in GaN revisited : New insights from terahertz and mid-infrared optical Hall effect
(
- Contribution to journal › Article
- 2023
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Mark
Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
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- Contribution to journal › Article
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Mark
Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
(
- Contribution to journal › Article
- 2022
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Mark
Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect
(
- Contribution to journal › Article
- 2021
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Mark
Critical view on buffer layer formation and monolayer graphene properties in high-temperature sublimation
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- Contribution to journal › Article
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Mark
Resolving mobility anisotropy in quasi-free-standing epitaxial graphene by terahertz optical Hall effect
(
- Contribution to journal › Article