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Low-frequency noise in ferroelectric III-V vertical gate-all-around FETs

Zhu, Zhongyunshen LU orcid ; Mamidala, Karthik Ram LU ; Persson, Anton E. O. LU orcid and Wernersson, Lars-Erik LU (2025) In IEEE Electron Device Letters
Abstract
In this letter, we demonstrate low-frequency noise (LFN) characterization of an InAs vertical gate-all-around hafnium-zirconium oxide (HZO) ferroelectric field-effect transistor (FeFET). The LFN characteristics are investigated before and after ferroelectric switching for up to 1000 cycles in the FeFET. The evolution of such cycling reveals distinct differences in the LFN for the two polarization states. The LFN is found to change more during cycling in the high-VT state than in the low-VT state, where the latter has an increased LFN already at various current levels during the first switching cycle. Our findings indicate that the mobility fluctuation and carrier number fluctuation are the dominant source of the LFN for low currents in the... (More)
In this letter, we demonstrate low-frequency noise (LFN) characterization of an InAs vertical gate-all-around hafnium-zirconium oxide (HZO) ferroelectric field-effect transistor (FeFET). The LFN characteristics are investigated before and after ferroelectric switching for up to 1000 cycles in the FeFET. The evolution of such cycling reveals distinct differences in the LFN for the two polarization states. The LFN is found to change more during cycling in the high-VT state than in the low-VT state, where the latter has an increased LFN already at various current levels during the first switching cycle. Our findings indicate that the mobility fluctuation and carrier number fluctuation are the dominant source of the LFN for low currents in the off-state and near-VT current levels, respectively, verified by fitting the experimental data to the different models (Less)
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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
IEEE Electron Device Letters
pages
4 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85219504259
ISSN
0741-3106
DOI
10.1109/LED.2025.3546165
language
English
LU publication?
yes
id
016a9ff2-4ee0-4c23-85fb-edda323d516d
date added to LUP
2025-03-04 16:41:59
date last changed
2025-05-29 07:26:37
@article{016a9ff2-4ee0-4c23-85fb-edda323d516d,
  abstract     = {{In this letter, we demonstrate low-frequency noise (LFN) characterization of an InAs vertical gate-all-around hafnium-zirconium oxide (HZO) ferroelectric field-effect transistor (FeFET). The LFN characteristics are investigated before and after ferroelectric switching for up to 1000 cycles in the FeFET. The evolution of such cycling reveals distinct differences in the LFN for the two polarization states. The LFN is found to change more during cycling in the high-VT state than in the low-VT state, where the latter has an increased LFN already at various current levels during the first switching cycle. Our findings indicate that the mobility fluctuation and carrier number fluctuation are the dominant source of the LFN for low currents in the off-state and near-VT current levels, respectively, verified by fitting the experimental data to the different models}},
  author       = {{Zhu, Zhongyunshen and Mamidala, Karthik Ram and Persson, Anton E. O. and Wernersson, Lars-Erik}},
  issn         = {{0741-3106}},
  language     = {{eng}},
  month        = {{02}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Electron Device Letters}},
  title        = {{Low-frequency noise in ferroelectric III-V vertical gate-all-around FETs}},
  url          = {{https://lup.lub.lu.se/search/files/209648167/Final_manuscript_EDL-2025-01-0177.pdf}},
  doi          = {{10.1109/LED.2025.3546165}},
  year         = {{2025}},
}