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Impact of Temperature-Induced Oxide Defects on HfxZr1−xO2 Ferroelectric Tunnel Junction Memristor Performance

Athle, Robin LU and Borg, Mattias LU orcid (2023) In IEEE Transactions on Electron Devices 70(3). p.1412-1416
Abstract
In this work, we evaluate the importance of the postmetallization annealing (PMA) temperature on the performance of HfxZr1−xO2-based ferroelectric tunnel junctions (FTJs). Our results indicate a significant difference in tunneling electroresistance (TER) ratio and endurance, depending on the PMA temperature despite negligible variations in remanent polarization. We conclude that the minimization of conductive oxide defect states is central to achieve high performance. Through carefully optimized PMA conditions, we demonstrate FTJs with a TER = 3 and low mean cycle-to-cycle variation of < 1.5% combined with at least 16 separable conductance states providing a 4-bit resolution analog FTJ.
Please use this url to cite or link to this publication:
author
and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Ferroelectric, Thin film, Memristor, HZO, FTJ, ferroelectric tunnel junction
in
IEEE Transactions on Electron Devices
volume
70
issue
3
pages
5 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85149313816
ISSN
0018-9383
DOI
10.1109/TED.2023.3240399
project
Ultra-fast thermal processing for next-generation ferroelectric hafnia
Development and Implementation of Ferroelectric oxides
language
English
LU publication?
yes
id
f51ca582-2c6e-4c2a-909c-effa96307045
date added to LUP
2023-03-10 13:24:28
date last changed
2024-06-08 04:01:16
@article{f51ca582-2c6e-4c2a-909c-effa96307045,
  abstract     = {{In this work, we evaluate the importance of the postmetallization annealing (PMA) temperature on the performance of HfxZr1−xO2-based ferroelectric tunnel junctions (FTJs). Our results indicate a significant difference in tunneling electroresistance (TER) ratio and endurance, depending on the PMA temperature despite negligible variations in remanent polarization. We conclude that the minimization of conductive oxide defect states is central to achieve high performance. Through carefully optimized PMA conditions, we demonstrate FTJs with a TER = 3 and low mean cycle-to-cycle variation of &lt; 1.5% combined with at least 16 separable conductance states providing a 4-bit resolution analog FTJ.}},
  author       = {{Athle, Robin and Borg, Mattias}},
  issn         = {{0018-9383}},
  keywords     = {{Ferroelectric; Thin film; Memristor; HZO; FTJ; ferroelectric tunnel junction}},
  language     = {{eng}},
  month        = {{02}},
  number       = {{3}},
  pages        = {{1412--1416}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Transactions on Electron Devices}},
  title        = {{Impact of Temperature-Induced Oxide Defects on Hf<sub>x</sub>Zr<sub>1−x</sub>O<sub>2</sub> Ferroelectric Tunnel Junction Memristor Performance}},
  url          = {{https://lup.lub.lu.se/search/files/140077715/Impact_of_temperature_induced_oxide_defect_on_FTJs.docx}},
  doi          = {{10.1109/TED.2023.3240399}},
  volume       = {{70}},
  year         = {{2023}},
}