Sofia Johansson (Former)
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- 2013
-
Mark
A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs
- Contribution to journal › Article
-
Mark
RF reliability of gate last InGaAs nMOSFETs with high-k dielectric
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2012
-
Mark
Highly controlled InAs nanowires on Si(111) wafers by MOVPE
(2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week 9(2).
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
- Contribution to journal › Article
-
Mark
InAs Nanowires for High Frequency Electronics
(2012) GigaHertz Symposium 2012
- Contribution to conference › Abstract
-
Mark
High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
(2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week In Physica Status Solidi. C, Current Topics in Solid State Physics 9(2). p.350-353
- Contribution to journal › Article
- 2011
-
Mark
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
- Contribution to journal › Article
-
Mark
Temperature and annealing effects on InAs nanowire MOSFETs
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Inverter circuits based on vertical InAs nanowire MOSFETs
(2011) Swedish System-on-Chip Conference, SSoCC 2011
- Contribution to conference › Paper, not in proceeding
- 2010
-
Mark
High Frequency Performance of Vertical InAs Nanowire MOSFET
(2010) 22nd International Conference on Indium Phosphide and Related Materials
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
