Lars-Erik Wernersson
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- 2014
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Mark
InAs nanowire MOSFET differential active mixer on Si-substrate
- Contribution to journal › Article
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Mark
In0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels
- Contribution to journal › Article
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Mark
RF and DC Analysis of Stressed InGaAs MOSFETs
- Contribution to specialist publication or newspaper › Specialist publication article
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Mark
Measurements of light absorption efficiency in InSb nanowires
- Contribution to journal › Article
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Mark
Electrical properties of GaSb/InAsSb core/shell nanowires
- Contribution to journal › Article
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Mark
Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistors
- Contribution to journal › Article
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Mark
InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.
- Contribution to journal › Article
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Mark
III-V Nanowire MOSFETs in RF-Applications
(2014) Symposium on State-of-the-Art Program on Compound Semiconductors 56 (SOTAPOCS) held during the 226th Meeting of the Electrochemical-Society 64(17). p.69-73
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors
- Contribution to journal › Article
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Mark
Time-Resolved X-ray Diffraction Investigation of the Modified Phonon Dispersion in InSb Nanowires.
- Contribution to journal › Article
