Magnus Borgström
171 – 180 of 231
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=""
width=""
height=""
allowtransparency="true"
frameborder="0">
</iframe>
- 2011
-
Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
(2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Dual-gate induced InP nanowire diode
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Photovoltaics with piezoelectric core-shell nanowires
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction
- Contribution to journal › Article
-
Mark
InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure
- Contribution to journal › Article
-
Mark
15 nm diameter InAs nanowire MOSFETs
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electron Image Series Reconstruction of Twin Interfaces in InP Superlattice Nanowires.
- Contribution to journal › Article
-
Mark
A new route towards semiconductor nanospintronics: highly Mn - doped GaAs nanowires realized by ion - implantation under dynamic annealing conditions.
(2011) MRS Fall Meeting, 2011
- Contribution to conference › Paper, not in proceeding
- 2010
-
Mark
High-Performance Single Nanowire Tunnel Diodes.
- Contribution to journal › Article
-
Mark
Changes in Contact Angle of Seed Particle Correlated with Increased Zincblende Formation in Doped InP Nanowires.
- Contribution to journal › Article
